fdd9407l fdd9407_f085 d-pak(to-252) 13? 12mm 2500 units fdd9407_f085 n-channel power trench ? mosfet features ? typ r ds(on) = 1.6m at v gs = 10v, i d = 80a ? typ q g(tot) = 86nc at v gs = 10v, i d = 80a ? uis capability ? rohs compliant ? qualified to aec q101 applications ? automotive engine control ? powertrain management ? solenoid and motor drivers ? electronic steering ? integrated starter/alternator ? distributed power architectures and vrm ? primary switch for 12v systems mosfet maximum ratings t j = 25c unless otherwise noted symbol parameter ratings units v dss drain to source voltage 40 v v gs gate to source voltage 20 v i d drain current - continuous (v gs =10) (note 1) t c = 25c 100 a pulsed drain current t c = 25c see figure4 e as single pulse avalanche energy (note 2) 171 mj p d power dissipation 227 w derate above 25 o c1.52w/ o c t j , t stg operating and storage temperature -55 to + 175 o c r jc thermal resistance junction to case 0.66 o c/w r ja maximum thermal resistance junction to ambient (note 3) 52 o c/w package marking and ordering information device marking device package reel size tape width quantity notes: 1: current is limited by bondwire configuration. 2: starting t j = 25c, l = 0.08mh, i as = 64a, v dd = 40v during inductor charging and v dd = 0v during time in avalanche 3: r ja is the sum of the junction-to-case and case-to-ambient thermal re sistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r jc is guaranteed by design while r ja is determined by the user's board design. the maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. d g s g s d to-252 d-pak (to-252) fdd9407l - f085 n-channel logic le vel powertrench ? mos fet 40 v, 100 a, 1.7 m ?2018 on semiconductor components industries, llc. publication order number: FDD9407L-F085 1 february-2018,rev.1 (vietnam)
fdd9407_f085 n-channel power trench ? mosfet 2 electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 40 - - v i dss drain to source leakage current v ds = 4 0 v , t j = 25 o c --1 a v gs = 0v t j = 175 o c(note 4) - - 1 ma i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 2.0 3.1 4.0 v r ds(on) drain to source on resistance i d = 80a, v gs = 10v t j = 25 o c -1.62m t j = 175 o c(note 4) - 2.64 3.22 m c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz - 6390 - pf c oss output capacitance - 1580 - pf c rss reverse transfer capacitance - 95 - pf r g gate resistance f = 1mhz - 2.3 - q g(tot) total gate charge at 10v v gs = 0 to 10v v dd = 32v i d = 80a -86112nc q g(th) threshold gate charge v gs = 0 to 2v - 12 15.6 nc q gs gate to source gate charge -30-nc q gd gate to drain ?miller? charge - 15 - nc switching characteristics drain-source diode characteristics notes: 4: the maximum value is specified by design at tj = 175c. product is not tested to this condition in production. t on turn-on time v dd = 20v, i d = 80a, v gs = 10v, r gen = 6 - - 120 ns t d(on) turn-on delay time - 27 - ns t r rise time - 48 - ns t d(off) turn-off delay time - 42 - ns t f fall time - 18 - ns t off turn-off time - - 97 ns v sd source to drain diode voltage i sd = 80a, v gs = 0v - - 1.25 v i sd = 40a, v gs = 0v - - 1.2 v t rr reverse recovery time i f = 80a, di sd /dt = 100a/ s, v dd =32v -5888ns q rr reverse recovery charge - 83 143 nc february-2018,rev.1 (vietnam)
fdd9407_f085 n-channel power trench ? mosfet 3 typical characteristics figure 1. normalized po wer dissipation vs case temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation multiplier t c , case temperature( o c) figure 2. maximum continuous drain current vs case temperature 25 50 75 100 125 150 175 200 0 50 100 150 200 250 300 current limited by silicon current limited by package v gs = 10v i d , drain current (a) t c , case temperature( o c) figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z t jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t c p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 100 1000 v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) t c = 25 o c i = i 2 175 - t c 150 for temperatures above 25 o c derate peak current as follows: february-2018,rev.1 (vietnam)
fdd9407_f085 n-channel power trench ? mosfet 4 figure 5. 11 01 0 0 0.1 1 10 100 1000 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c 100ms forward bias safe operating area 1e-3 0.01 0.1 1 10 100 1000 1 10 100 1000 starting t j = 150 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r z 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 34567 0 50 100 150 200 250 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 p s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 8. 0.00.20.40.60.81.01.2 1 10 100 300 t j = 25 o c t j = 175 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) forward diode characteristics figure 9. 012 0 50 100 150 200 250 5.5v v gs 15v top 10v 8v 7v 6v 5.5v bottom 80 p s pulse width tj=25 o c i d , drain current (a) v ds , drain to source voltage (v) saturation characteristics figure 10. 0.0 0.5 1.0 1.5 2.0 0 50 100 150 200 250 5.5v 5.5v i d , drain current (a) v ds , drain to source voltage (v) v gs 15v top 10v 8v 7v 6v 5.5v bottom 80 p s pulse width tj=175 o c saturation characteristics typical characteristics february-2018,rev.1 (vietnam)
fdd9407_f085 n-channel power trench ? mosfet 5 figure 11. 24681 0 0 6 12 18 24 30 i d = 80a pulse duration = 80 p s duty cycle = 0.5% max r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage (v) t j = 25 o c t j = 175 o c rdson vs gate voltage figure 12. normalized rdson vs junction te mperature -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 pulse duration = 80 p s duty cycle = 0.5% max i d = 80a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) figure 13. -80 -40 0 40 80 120 160 200 0.4 0.6 0.8 1.0 1.2 v gs = v ds i d = 250 p a normalized gate threshold voltage t j , junction temperature( o c) normalized gate threshold voltage vs temperature figure 14. -80 -40 0 40 80 120 160 200 0.8 0.9 1.0 1.1 1.2 i d = 1ma normalized drain to source breakdown voltage t j , junction temperature ( o c) normalized drain to source breakdown voltage vs junction temperature figure 15. 0.1 1 10 100 10 100 1000 10000 f = 1mhz v gs = 0v c rss c oss c iss capacitance (pf) v ds , drain to source voltage ( v ) capacitance vs drain to source voltage figure 16. 0 20406080100 0 2 4 6 8 10 i d = 80a v dd = 20v q g , gate charge(nc) v gs , gate to source voltage(v) gate charge vs gate to source voltage typical characteristics february-2018,rev.1 (vietnam)
? dimension l3/e1 is for reference only. notes millimeters inches dim. min. max. min. max. a 2.18 2.38 0.086 0.094 a1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 d 5.97 6.22 0.235 0.245 d1 4.10 - 0.161 - e 6.35 6.73 0.250 0.265 e1 4.32 - 0.170 - h 9.40 10.41 0.370 0.410 e 2.28 bsc 0.090 bsc e1 4.56 bsc 0.180 bsc l 1.40 1.78 0.055 0.070 l3 0.89 1.27 0.035 0.050 l4 - 1.02 - 0.040 l5 1.01 1.52 0.040 0.060 ? l3 d l4 l5 b b2 e1 e1 d1 c a1 gage plane height (0.5 mm) e b3 e c2 a l h d-pak to-252 6 february-2018,rev.1 (vietnam)
product speci?cation supersedes data of vietnam
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